IRGP20B120U-EP

Symbol Micros: TIRGP20b120u-ep

112799

TIRGP20b120u-ep

Contractor Symbol:

Case : TO247AD

Datasheet

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Transistor IGBT ; 1200V; 20V; 40A; 120A; 300W; 4,0V~6,0V; 254nC; -55°C~150°C;

Parameters

Gate charge:	254nC
Max. dissipated power:	300W
Max collector current (impulse):	120A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247AD
Manufacturer:	International Rectifier

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• Parameters

Gate charge:	254nC
Max. dissipated power:	300W
Max collector current (impulse):	120A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247AD
Manufacturer:	International Rectifier
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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