IRL2910STRLPBF

Symbol Micros: TIRL2910s
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-MOSFET; 100V; 16V; 40mOhm; 55A; 200W; -55°C ~ 175°C; Replacement: IRL2910SPBF; IRL2910STRLPBF; IRL2910STRRPBF; IRL2910SPBF-GURT; IRL2910S;
Parameters
Open channel resistance: 40mOhm
Max. drain current: 55A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRL2910STRLPBF RoHS Case style: TO263t/r (D2PAK)  
In stock:
970 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 1,8655 1,5554 1,3778 1,2926 1,2429
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Packaging:
800
Manufacturer:: Infineon Manufacturer part number: IRL2910STRLPBF Case style: TO263 (D2PAK)  
External warehouse:
320 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 1,2429
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRL2910STRLPBF Case style: TO263 (D2PAK)  
External warehouse:
4600 pcs.
Quantity of pcs. 800+ (Please wait for the order confirmation)
Net price (EUR) 1,2429
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 40mOhm
Max. drain current: 55A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD