IRL2910S
Symbol Micros:
TIRL2910s
Case : TO263 (D2PAK)
N-MOSFET HEXFET 100V 55A 3.8W 0.026Ω
Parameters
| Open channel resistance: | 40mOhm |
| Max. drain current: | 55A |
| Max. power loss: | 200W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | Infineon (IRF) |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRL2910STRLPBF RoHS
Case style: TO263t/r (D2PAK)
In stock:
200 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 100+ |
|---|---|---|---|---|---|
| Net price (EUR) | 1,8343 | 1,5309 | 1,3549 | 1,2715 | 1,2229 |
| Open channel resistance: | 40mOhm |
| Max. drain current: | 55A |
| Max. power loss: | 200W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | Infineon (IRF) |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 16V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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