IRL520N

Symbol Micros: TIRL520n

45120

TIRL520n

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Case : TO220

Datasheet

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N-MOSFET HEXFET 100V 10A 48W 0.180Ω

Parameters

Open channel resistance:	260mOhm
Max. drain current:	10A
Max. power loss:	48W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Max. gate-source Voltage:	16V

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• Parameters

Open channel resistance:	260mOhm
Max. drain current:	10A
Max. power loss:	48W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Max. gate-source Voltage:	16V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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