IRL520NS

Symbol Micros: TIRL520ns

45121

TIRL520ns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET HEXFET 100V 10A 3.8W 0.18Ω

Parameters

Open channel resistance:	260mOhm
Max. drain current:	10A
Max. power loss:	48W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRL520NSTRL RoHS Case style: TO263 (D2PAK)  

In stock:

203 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,1493	0,7646	0,6325	0,5711	0,5475

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Packaging:
800 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	260mOhm
Max. drain current:	10A
Max. power loss:	48W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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