IRL520NS

Symbol Micros: TIRL520ns
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET HEXFET 100V 10A 3.8W 0.18Ω
Parameters
Open channel resistance: 260mOhm
Max. drain current: 10A
Max. power loss: 48W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRL520NSTRL RoHS Case style: TO263 (D2PAK)  
In stock:
388 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 1,0735 0,7141 0,5904 0,5321 0,5111
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Packaging:
800
Manufacturer:: Infineon Manufacturer part number: IRL520NSTRLPBF RoHS Case style: TO263t/r (D2PAK)  
In stock:
800 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 1,0735 0,7141 0,5904 0,5321 0,5111
Add to comparison tool
Packaging:
800
Open channel resistance: 260mOhm
Max. drain current: 10A
Max. power loss: 48W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD