IRL530NS
Symbol Micros:
TIRL530ns
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET HEXFET; 100V; 20V; 100mOhm; 17A; 3,8W; -55°C~175°C; Substitute: IRL530NSTRLPBF; IRL530NSPBF; IRL530NSPBF-GURT; IRL530NSTRRPBF;
Parameters
| Open channel resistance: | 100mOhm |
| Max. drain current: | 17A |
| Max. power loss: | 3,8W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 100mOhm |
| Max. drain current: | 17A |
| Max. power loss: | 3,8W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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