IRL530NS
Symbol Micros:
TIRL530ns
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET HEXFET; 100V; 20V; 100mOhm; 17A; 3,8W; -55°C~175°C; Substitute: IRL530NSTRLPBF; IRL530NSPBF; IRL530NSPBF-GURT; IRL530NSTRRPBF;
Parameters
| Open channel resistance: | 100mOhm |
| Max. drain current: | 17A |
| Max. power loss: | 3,8W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRL530NSTRLPBF RoHS
Case style: TO263t/r (D2PAK)
Datasheet
In stock:
800 pcs.
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 500+ |
|---|---|---|---|---|---|
| Net price (EUR) | 1,1812 | 0,7859 | 0,6494 | 0,5859 | 0,5624 |
Manufacturer:: Infineon
Manufacturer part number: IRL530NSTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
1150 pcs.
| Quantity of pcs. | 10+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,5624 |
Manufacturer:: Infineon
Manufacturer part number: IRL530NSTRLPBF
Case style: TO263 (D2PAK)
External warehouse:
4000 pcs.
| Quantity of pcs. | 800+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,5624 |
| Open channel resistance: | 100mOhm |
| Max. drain current: | 17A |
| Max. power loss: | 3,8W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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