IRL530NS

Symbol Micros: TIRL530NS VBS

368311

TIRL530NS VBS

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Case : TO263

Datasheet

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TO-263 MOSFETs ROHS IRL530NSPBF-VB;

Parameters

Open channel resistance:	100mOhm
Max. drain current:	20A
Max. power loss:	105W
Case:	TO263
Manufacturer:	VBsemi
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	100mOhm
Max. drain current:	20A
Max. power loss:	105W
Case:	TO263
Manufacturer:	VBsemi
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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