IRL6372PBF SOIC08

Symbol Micros: TIRL6372
Contractor Symbol:
Case : SOP08
N-MOSFET 30V 8.1A 2W *OBSOLETE ; IRL6372TRPBF IRL6372TRPBF IRL6372PBF-GURT
Parameters
Open channel resistance: 23mOhm
Max. drain current: 8,1A
Max. power loss: 2W
Case: SOP08
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 23mOhm
Max. drain current: 8,1A
Max. power loss: 2W
Case: SOP08
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD