IRL640S

Symbol Micros: TIRL640s

45125

TIRL640s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 200V 17A 3.1W 0.18Ω IRL640SPBF IRL640STRLPBF IRL640STRRPBF

Parameters

Open channel resistance:	180mOhm
Max. drain current:	17A
Max. power loss:	3,1W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: IRL640SPBF Case style: TO263 (D2PAK)  

External warehouse:

325 pcs.

Quantity of pcs.	25+ (Please wait for the order confirmation)
Net price (EUR)	1,1308

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Packaging:
25

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	180mOhm
Max. drain current:	17A
Max. power loss:	3,1W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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