IRL640S

Symbol Micros: TIRL640s
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET 200V 17A 3.1W 0.18Ω IRL640SPBF IRL640STRLPBF IRL640STRRPBF
Parameters
Open channel resistance: 180mOhm
Max. drain current: 17A
Max. power loss: 3,1W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: IRL640SPBF Case style: TO263 (D2PAK)  
External warehouse:
375 pcs.
Quantity of pcs. 25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8848
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: IRL640STRLPBF Case style: TO263 (D2PAK)  
External warehouse:
1600 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7462
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: IRL640SPBF Case style: TO263 (D2PAK)  
External warehouse:
509 pcs.
Quantity of pcs. 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7462
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 180mOhm
Max. drain current: 17A
Max. power loss: 3,1W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 10V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD