IRBL3813

Symbol Micros: TIRLB3813

78957

TIRLB3813

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 30V 260A 1.95mohm

Parameters

Open channel resistance:	2,6mOhm
Max. drain current:	260A
Max. power loss:	230W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V

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Estimated date:
2026-11-30

Quantity of pcs.: 100

• Parameters

Open channel resistance:	2,6mOhm
Max. drain current:	260A
Max. power loss:	230W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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