IRLD120

Symbol Micros: TIRLD120

45133

TIRLD120

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Case : PDIP04HVMDIP

Datasheet

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N-MOSFET 100V 1.3A 1.3W 0.27Ω

Parameters

Open channel resistance:	380mOhm
Max. drain current:	1,3A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	380mOhm
Max. drain current:	1,3A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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