IRLD120

Symbol Micros: TIRLD120
Contractor Symbol:
Case : PDIP04HVMDIP
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N-MOSFET 100V 1.3A 1.3W 0.27Ω
Parameters
Open channel resistance: 380mOhm
Max. drain current: 1,3A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRLD120 RoHS Case style: PDIP04HVMDIP  
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6875 0,4305 0,3588 0,3194 0,2986
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Packaging:
100
Open channel resistance: 380mOhm
Max. drain current: 1,3A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 10V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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