IRLD120

Symbol Micros: TIRLD120

45133

TIRLD120

Contractor Symbol:

Case : PDIP04HVMDIP

Datasheet

Technical drawing Add to favourites

N-MOSFET 100V 1.3A 1.3W 0.27Ω

Parameters

Open channel resistance:	380mOhm
Max. drain current:	1,3A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRLD120 RoHS Case style: PDIP04HVMDIP  

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,7012	0,4392	0,3660	0,3258	0,3046

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	380mOhm
Max. drain current:	1,3A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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