IRLIZ34N

Symbol Micros: TIRLIZ34n

45141

TIRLIZ34n

Contractor Symbol:

Case : TO220iso

Datasheet

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N-MOSFET HEXFET 55V 22A 37W 0.035Ω

Parameters

Open channel resistance:	60mOhm
Max. drain current:	22A
Max. power loss:	37W
Case:	TO220iso
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	60mOhm
Max. drain current:	22A
Max. power loss:	37W
Case:	TO220iso
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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