IRLL024Z

Symbol Micros: TIRLL024z
Contractor Symbol:
Case : SOT223
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N-MOSFET HEXFET 55V 5A 1W 0.06Ω
Parameters
Open channel resistance: 57,5mOhm
Max. drain current: 5,1A
Max. power loss: 2,8W
Case: SOT223
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRLL024ZTRPBF RoHS Case style: SOT223t/r  
In stock:
1200 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 0,9069 0,6023 0,4984 0,4500 0,4315
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Packaging:
2500
Open channel resistance: 57,5mOhm
Max. drain current: 5,1A
Max. power loss: 2,8W
Case: SOT223
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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