IRLL3303

Symbol Micros: TIRLL3303

45144

TIRLL3303

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

N-MOSFET HEXFET 30V 4.6A 1W 0.031Ω

Parameters

Open channel resistance:	45mOhm
Max. drain current:	6,5A
Max. power loss:	2,1W
Case:	SOT223
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRLL3303 RoHS Case style: SOT223t/r Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	5+	20+	100+	200+
Net price (EUR)	3,0213	2,4884	2,2865	2,1809	2,1574

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	45mOhm
Max. drain current:	6,5A
Max. power loss:	2,1W
Case:	SOT223
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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