Open channel resistance:
|
135mOhm |
Max. drain current:
|
3,7A |
Max. power loss:
|
1,3W |
Case:
|
SOT23 |
Manufacturer:
|
INFINEON |
Max. drain-source voltage:
|
20V |
Transistor type:
|
P-MOSFET |
Max. gate-source Voltage:
|
12V |
Operating temperature (range):
|
-55°C ~ 150°C |
Mounting:
|
SMD |
Detailed description
P-Channel MOSFET Transistor IRLML6402TRPBF
The IRLML6402TRPBF (Micros part number: TIRLML6402) is a high-quality P-channel MOSFET transistor manufactured by Infineon. This component features a robust design in a compact SOT23 SMD package, ensuring circuit miniaturization and effective heat dissipation. Thanks to its parameters, it is ideal for applications requiring fast signal switching in low and medium voltage circuits.
Key Features and Specifications of the IRLML6402TRPBF Transistor
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Type: P-Channel MOSFET
-
Maximum Drain-Source Voltage (Vdss): 20V
-
Maximum Drain Current (Id): 3.7A
-
On-Resistance (Rds(on)): 135 mΩ
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Maximum Gate-Source Voltage (Vgs): 12V
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Package: SOT23
-
Maximum Power Dissipation (Pd): 1.3W
-
Manufacturer: Infineon
Typical Applications of the IRLML6402TRPBF Transistor
This transistor is designed for use in:
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control circuits – such as power management systems in laptops and portable devices;
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chargers and DC/DC converters – serving as a switching element in efficient power supplies;
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motor drivers – used in H-bridge circuits and other low-power motor controllers;
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consumer electronics – applications where miniaturization and low resistance are crucial.
We encourage you to review the full datasheet on the manufacturer’s website and to take advantage of our offer on this and other electronic components. For any questions, our technical team is here to help.