IRLR014N

Symbol Micros: TIRLR014n

44782

TIRLR014n

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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N-MOSFET HEXFET 55V 10A 28W 0.14Ω

Parameters

Open channel resistance:	280mOhm
Max. drain current:	7,7A
Max. power loss:	25W
Case:	TO252 (DPACK)
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRLR014 RoHS Case style: TO252 (DPACK)  

In stock:

100 pcs.

Quantity of pcs.	2+	10+	75+	150+	750+
Net price (EUR)	0,6103	0,3856	0,2933	0,2792	0,2650

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Packaging:
75/150 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	280mOhm
Max. drain current:	7,7A
Max. power loss:	25W
Case:	TO252 (DPACK)
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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