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IRLR024NPBF HXY MOSFET

Name: TIRLR024n HXY TIRLR024n HXY
Brand: HXY MOSFET
SKU: TIRLR024nHXY
Price: 0.1623 EUR
Availability: InStock

Symbol Micros: TIRLR024n HXY

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 60V; 20V; 40mOhm; 20A; 34,7W; -55°C ~ 150°C; Equivalent: IRLR024PBF; IRLR024TRPBF; IRLR024TRLPBF; IRLR024NPBF; IRLR024NTRLPBF; IRLR024NTRPBF; IRLR024NTRRPBF; SP001550522; SP001568558; SP001578872; SP001553142;

Parameters

Open channel resistance:	40mOhm
Max. drain current:	20A
Max. power loss:	34,7W
Case:	TO252 (DPACK)
Manufacturer:	HXY MOSFET
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

Manufacturer:: HXY MOSFET Manufacturer part number: IRLR024NPBF-HXY RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4211	0,2776	0,1981	0,1731	0,1623

Parameters

Open channel resistance:	40mOhm
Max. drain current:	20A
Max. power loss:	34,7W
Case:	TO252 (DPACK)
Manufacturer:	HXY MOSFET
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Quantity of pcs.	2+	5+	20+	100+	400+
Net price (EUR)	0,4658	0,3364	0,2423	0,1995	0,1859

Quantity of pcs.	2+	10+	40+	100+	495+
Net price (EUR)	0,4658	0,2800	0,2195	0,2007	0,1859

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,4658	0,2800	0,2138	0,1924	0,1859

IRLR024NPBF HXY MOSFET

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