IRLR2905Z

Symbol Micros: TIRLR2905z
Contractor Symbol:
Case : TO252 (DPACK)
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N-MOSFET HEXFET 55V 42A 110W 0.0135Ω
Parameters
Open channel resistance: 22,5mOhm
Max. drain current: 60A
Max. power loss: 110W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRLR2905ZTR RoHS Case style: TO252 (DPACK) t/r  
In stock:
4220 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,1432 0,7991 0,6788 0,6223 0,6011
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Packaging:
2000
Manufacturer:: Infineon Manufacturer part number: IRLR2905ZTRPBF Case style: TO252 (DPACK)  
External warehouse:
3550 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6011
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRLR2905ZTRPBF Case style: TO252 (DPACK)  
External warehouse:
26000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6011
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 22,5mOhm
Max. drain current: 60A
Max. power loss: 110W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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