IRLR2905Z

Micros part number: TIRLR2905z
Package: TO252 (DPACK)
N-MOSFET HEXFET 55V 42A 110W 0.0135Ω
Parameters
Open channel resistance: 22,5mOhm
Max. drain current: 60A
Max. power loss: 110W
Housing: TO252 (DPACK)
Max. drain-source voltage: 55V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
         
 
Pozycja dostępna na zamówienie
Open channel resistance: 22,5mOhm
Max. drain current: 60A
Max. power loss: 110W
Housing: TO252 (DPACK)
Max. drain-source voltage: 55V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Montage: SMD