IRLR3110Z

Symbol Micros: TIRLR3110z

44780

TIRLR3110z

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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N-MOSFET HEXFET 100V 42A 140W 0.014Ω

Parameters

Open channel resistance:	16mOhm
Max. power loss:	140W
Max. drain current:	63A
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRLR3110Z RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

1000 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,1409	0,7583	0,6283	0,5669	0,5433

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Packaging:
1000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	16mOhm
Max. power loss:	140W
Max. drain current:	63A
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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