IRLR3110Z

Symbol Micros: TIRLR3110z

44780

TIRLR3110z

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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N-MOSFET HEXFET 100V 42A 140W 0.014Ω

Parameters

Open channel resistance:	16mOhm
Max. drain current:	63A
Max. power loss:	140W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	16mOhm
Max. drain current:	63A
Max. power loss:	140W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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