IRLR3110Z

Symbol Micros: TIRLR3110z

44780

TIRLR3110z

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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N-MOSFET HEXFET 100V 42A 140W 0.014Ω

Parameters

Open channel resistance:	16mOhm
Max. drain current:	63A
Max. power loss:	140W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Max. gate-source Voltage:	16V

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRLR3110Z RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

900 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,1152	0,7412	0,6142	0,5541	0,5310

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Packaging:
1000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRLR3110ZTRPBF Case style: TO252 (DPAK)  

External warehouse:

8900 pcs.

Quantity of pcs.	50+ (Please wait for the order confirmation)
Net price (EUR)	0,7629

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	16mOhm
Max. drain current:	63A
Max. power loss:	140W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Max. gate-source Voltage:	16V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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