IRLR3705Z

Symbol Micros: TIRLR3705z

44785

TIRLR3705z

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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N-MOSFET HEXFET 55V 42A 130W 0.008Ω

Parameters

Open channel resistance:	12mOhm
Max. power loss:	130W
Max. drain current:	89A
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRLR3705ZTR RoHS Case style: TO252 (DPACK) t/r  

In stock:

491 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,4910	1,1830	1,0057	0,9240	0,8773

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Packaging:
2000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	12mOhm
Max. power loss:	130W
Max. drain current:	89A
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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