IRLR3717

Symbol Micros: TIRLR3717

44789

TIRLR3717

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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N-MOSFET HEXFET 20V 120A 89W 0.004Ω

Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	89W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	89W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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