IRLR3717

Micros part number: TIRLR3717
Package: TO252 (DPACK)
N-MOSFET HEXFET 20V 120A 89W 0.004Ω
Parameters
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 89W
Housing: TO252 (DPACK)
Max. drain-source voltage: 20V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRLR3717 RoHS Package: TO252 (DPACK)  
In stock:
45 pcs.
Quantity 2+ 10+ 75+ 300+ 900+
Net price (PLN) 3,8900 2,4600 1,8700 1,7400 1,6900
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Standard packaging:
75/300
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 89W
Housing: TO252 (DPACK)
Max. drain-source voltage: 20V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Montage: SMD