IRLR3915

Symbol Micros: TIRLR3915
Contractor Symbol:
Case : TO252 (DPACK)
N-MOSFET HEXFET 55V 30A 120W 0.014Ω
Parameters
Open channel resistance: 17mOhm
Max. drain current: 61A
Max. power loss: 120W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRLR3915 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 1+ 5+ 30+ 200+ 400+
Net price (EUR) 0,8620 0,5724 0,4565 0,4171 0,4102
Add to comparison tool
Packaging:
200
Open channel resistance: 17mOhm
Max. drain current: 61A
Max. power loss: 120W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD