IRLR3915

Symbol Micros: TIRLR3915
Contractor Symbol:
Case : TO252 (DPACK)
N-MOSFET HEXFET 55V 30A 120W 0.014Ω
Parameters
Open channel resistance: 17mOhm
Max. drain current: 61A
Max. power loss: 120W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRLR3915 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,7439 0,4717 0,3731 0,3403 0,3238
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Packaging:
200
Manufacturer:: Infineon Manufacturer part number: IRLR3915TRPBF Case style: TO252 (DPACK)  
External warehouse:
56000 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,3238
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Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRLR3915TRPBF Case style: TO252 (DPACK)  
External warehouse:
5100 pcs.
Quantity of pcs. 50+ (Please wait for the order confirmation)
Net price (EUR) 0,4716
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 17mOhm
Max. drain current: 61A
Max. power loss: 120W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD