IRLU3705Z

Symbol Micros: TIRLU3705z

41240

TIRLU3705z

Contractor Symbol:

Case : TO251 (IPACK)

Datasheet

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N-MOSFET HEXFET 42A 55V 130W 0.08Ω obsolete

Parameters

Open channel resistance:	12mOhm
Max. drain current:	89A
Max. power loss:	130W
Case:	TO251 (IPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	12mOhm
Max. drain current:	89A
Max. power loss:	130W
Case:	TO251 (IPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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