G04P10HE

Symbol Micros: TISP16DP10LMXTSA1 GO

397081

TISP16DP10LMXTSA1 GO

Case : SOT223

Datasheet

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Transistor MOSFET; SOT-223; P-Channel; YES ESD; 100V; 4A; 1.2W; 1.55V; 250mOhm ISP16DP10LM;

Parameters

Open channel resistance:	250mOhm
Max. drain current:	4A
Max. power loss:	1,2W
Case:	SOT223
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

All parameters

         

 

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• Parameters

Open channel resistance:	250mOhm
Max. drain current:	4A
Max. power loss:	1,2W
Case:	SOT223
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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