JNG15N120AI JIAENSEMI

Symbol Micros: TJNG15n120ai

528827

TJNG15n120ai

Contractor Symbol:

Case : TO 3P

Datasheet

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Transistor IGBT ; 1200V; 20V; 30A; 45A; 175W; 4V~6V; 70nC; -55°C~150°C;

Parameters

Gate charge:	70nC
Max. dissipated power:	175W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO 3P
Manufacturer:	JIAENSEMI

All parameters

Manufacturer:: JIAENSEMI Manufacturer part number: JNG15N120AI RoHS Case style: TO 3P Datasheet

In stock:

25 pcs.

Quantity of pcs.	1+	5+	30+	150+	300+
Net price (EUR)	1,9933	1,4785	1,2623	1,1894	1,1729

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	70nC
Max. dissipated power:	175W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO 3P
Manufacturer:	JIAENSEMI
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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