JNG15N120HS2 JIAENSEMI

Symbol Micros: TJNG15n120hs2

528828

TJNG15n120hs2

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 30A; 45A; 180W; 4V~6V; 70nC; -55°C~150°C;

Parameters

Gate charge:	70nC
Max. dissipated power:	180W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	JIAENSEMI

All parameters

Manufacturer:: JIAENSEMI Manufacturer part number: JNG15N120HS2 RoHS Case style: TO247 Datasheet

In stock:

60 pcs.

Quantity of pcs.	1+	5+	30+	60+	300+
Net price (EUR)	1,8734	1,3892	1,1847	1,1494	1,1024

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Packaging:
30/60 Quantity (multiple: 1)

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• Parameters

Gate charge:	70nC
Max. dissipated power:	180W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	JIAENSEMI
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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