JNG15N120HS2 JIAENSEMI
Symbol Micros:
TJNG15n120hs2
Case : TO247
Transistor IGBT ; 1200V; 20V; 30A; 45A; 180W; 4V~6V; 70nC; -55°C~150°C;
Parameters
| Gate charge: | 70nC |
| Max. dissipated power: | 180W |
| Max collector current (impulse): | 45A |
| Max. collector current: | 30A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,0V |
| Case: | TO247 |
| Manufacturer: | JIAENSEMI |
| Gate charge: | 70nC |
| Max. dissipated power: | 180W |
| Max collector current (impulse): | 45A |
| Max. collector current: | 30A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,0V |
| Case: | TO247 |
| Manufacturer: | JIAENSEMI |
| Operating temperature (range): | -55°C ~ 150°C |
| Collector-emitter voltage: | 1200V |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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