JNG15T120HS JIAENSEMI

Symbol Micros: TJNG15t120hs

528829

TJNG15t120hs

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 30V; 30A; 45A; 105W; 4,5V~6,5V; 120nC; -40°C~155°C;

Parameters

Gate charge:	120nC
Max. dissipated power:	105W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO247
Manufacturer:	JIAENSEMI

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• Parameters

Gate charge:	120nC
Max. dissipated power:	105W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO247
Manufacturer:	JIAENSEMI
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 155°C
Gate-emitter voltage:	30V
Mounting:	THT

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