JNG15T65FS1 JIAENSEMI

Symbol Micros: TJNG15t65fs1

528830

TJNG15t65fs1

Contractor Symbol:

Case : TO220iso

Datasheet

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Transistor IGBT ; 650V; 30V; 30A; 45A; 28W; 4,5V~6,5V; 40,7nC; -55°C~150°C;

Parameters

Gate charge:	40,7nC
Max. dissipated power:	28W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO220iso
Manufacturer:	JIAENSEMI

All parameters

Manufacturer:: JIAENSEMI Manufacturer part number: JNG15T65FS1 RoHS Case style: TO220iso Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9825	0,7216	0,5782	0,4960	0,4678

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Gate charge:	40,7nC
Max. dissipated power:	28W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO220iso
Manufacturer:	JIAENSEMI
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	30V
Mounting:	THT

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