JNG20T60FS JIAENSEMI

Symbol Micros: TJNG20t60fs

528831

TJNG20t60fs

Contractor Symbol:

Case : TO220iso

Datasheet

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Transistor IGBT ; 600V; 30V; 40A; 60A; 40W; 4,5V~6,5V; 62nC; -55°C~150°C;

Parameters

Gate charge:	62nC
Max. dissipated power:	40W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO220iso
Manufacturer:	JIAENSEMI

All parameters

Manufacturer:: JIAENSEMI Manufacturer part number: JNG20T60FS RoHS Case style: TO220iso Datasheet

In stock:

90 pcs.

Quantity of pcs.	1+	5+	50+	100+	500+
Net price (EUR)	1,0813	0,7193	0,5547	0,5359	0,5148

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Gate charge:	62nC
Max. dissipated power:	40W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO220iso
Manufacturer:	JIAENSEMI
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	30V
Mounting:	THT

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