JNG20T65KS JIAENSEMI
Symbol Micros:
TJNG20t65ks
Case : TO263
Transistor IGBT ; 650V; 30V; 40A; 60A; 139W; 5,1V~6,9V; 271nC; -55°C~150°C;
Parameters
Gate charge: | 271nC |
Max. dissipated power: | 139W |
Max. collector current: | 40A |
Max collector current (impulse): | 60A |
Forvard volatge [Vgeth]: | 5,1V ~ 6,9V |
Case: | TO263 |
Manufacturer: | JIAENSEMI |
Gate charge: | 271nC |
Max. dissipated power: | 139W |
Max. collector current: | 40A |
Max collector current (impulse): | 60A |
Forvard volatge [Vgeth]: | 5,1V ~ 6,9V |
Case: | TO263 |
Manufacturer: | JIAENSEMI |
Operating temperature (range): | -55°C ~ 150°C |
Collector-emitter voltage: | 650V |
Gate-emitter voltage: | 30V |
Mounting: | SMD |
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