JNG20T65KS JIAENSEMI

Symbol Micros: TJNG20t65ks

528832

TJNG20t65ks

Contractor Symbol:

Case : TO263

Datasheet

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Transistor IGBT ; 650V; 30V; 40A; 60A; 139W; 5,1V~6,9V; 271nC; -55°C~150°C;

Parameters

Gate charge:	271nC
Max. dissipated power:	139W
Max. collector current:	40A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,1V ~ 6,9V
Case:	TO263
Manufacturer:	JIAENSEMI

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• Parameters

Gate charge:	271nC
Max. dissipated power:	139W
Max. collector current:	40A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,1V ~ 6,9V
Case:	TO263
Manufacturer:	JIAENSEMI
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	30V
Mounting:	SMD

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