JNG20T65KS JIAENSEMI

Symbol Micros: TJNG20t65ks
Contractor Symbol:
Case : TO263
Transistor IGBT ; 650V; 30V; 40A; 60A; 139W; 5,1V~6,9V; 271nC; -55°C~150°C;
Parameters
Gate charge: 271nC
Max. dissipated power: 139W
Max. collector current: 40A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 5,1V ~ 6,9V
Case: TO263
Manufacturer: JIAENSEMI
Manufacturer:: JIAENSEMI Manufacturer part number: JNG20T65KS RoHS Case style: TO263t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 1,2293 0,8180 0,6769 0,6111 0,5853
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Packaging:
100
Gate charge: 271nC
Max. dissipated power: 139W
Max. collector current: 40A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 5,1V ~ 6,9V
Case: TO263
Manufacturer: JIAENSEMI
Operating temperature (range): -55°C ~ 150°C
Collector-emitter voltage: 650V
Gate-emitter voltage: 30V
Mounting: SMD