JNG25N120HS JIAENSEMI

Symbol Micros: TJNG25n120hs
Contractor Symbol:
Case : TO247
Transistor IGBT ; 1200V; 30V; 45A; 80A; 220W; 4,5V~5,5V; 130nC; -55°C~150°C;
Parameters
Gate charge: 130nC
Max. dissipated power: 220W
Max. collector current: 45A
Max collector current (impulse): 80A
Forvard volatge [Vgeth]: 4,5V ~ 5,5V
Case: TO247
Manufacturer: JIAENSEMI
Manufacturer:: JIAENSEMI Manufacturer part number: JNG25N120HS RoHS Case style: TO247 Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 5+ 30+ 150+ 300+
Net price (EUR) 1,9932 1,4785 1,2622 1,1894 1,1729
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Packaging:
30
Gate charge: 130nC
Max. dissipated power: 220W
Max. collector current: 45A
Max collector current (impulse): 80A
Forvard volatge [Vgeth]: 4,5V ~ 5,5V
Case: TO247
Manufacturer: JIAENSEMI
Operating temperature (range): -55°C ~ 150°C
Collector-emitter voltage: 1200V
Gate-emitter voltage: 30V
Mounting: THT