JNG25N120HS JIAENSEMI

Symbol Micros: TJNG25n120hs

528833

TJNG25n120hs

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 30V; 45A; 80A; 220W; 4,5V~5,5V; 130nC; -55°C~150°C;

Parameters

Gate charge:	130nC
Max. dissipated power:	220W
Max collector current (impulse):	80A
Max. collector current:	45A
Forvard volatge [Vgeth]:	4,5V ~ 5,5V
Case:	TO247
Manufacturer:	JIAENSEMI

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• Parameters

Gate charge:	130nC
Max. dissipated power:	220W
Max collector current (impulse):	80A
Max. collector current:	45A
Forvard volatge [Vgeth]:	4,5V ~ 5,5V
Case:	TO247
Manufacturer:	JIAENSEMI
Collector-emitter voltage:	1200V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	30V
Mounting:	THT

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