JNG25N120HS JIAENSEMI
Symbol Micros:
TJNG25n120hs
Case : TO247
Transistor IGBT ; 1200V; 30V; 45A; 80A; 220W; 4,5V~5,5V; 130nC; -55°C~150°C;
Parameters
Gate charge: | 130nC |
Max. dissipated power: | 220W |
Max. collector current: | 45A |
Max collector current (impulse): | 80A |
Forvard volatge [Vgeth]: | 4,5V ~ 5,5V |
Case: | TO247 |
Manufacturer: | JIAENSEMI |
Gate charge: | 130nC |
Max. dissipated power: | 220W |
Max. collector current: | 45A |
Max collector current (impulse): | 80A |
Forvard volatge [Vgeth]: | 4,5V ~ 5,5V |
Case: | TO247 |
Manufacturer: | JIAENSEMI |
Operating temperature (range): | -55°C ~ 150°C |
Collector-emitter voltage: | 1200V |
Gate-emitter voltage: | 30V |
Mounting: | THT |
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