JNG25T120HS JIAENSEMI

Symbol Micros: TJNG25t120hs

528834

TJNG25t120hs

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 30V; 50A; 75A; 275W; 4,5V~6,5V; 200nC; -40°C~155°C;

Parameters

Gate charge:	200nC
Max. dissipated power:	275W
Max collector current (impulse):	75A
Max. collector current:	50A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO247
Manufacturer:	JIAENSEMI

All parameters

Manufacturer:: JIAENSEMI Manufacturer part number: JNG25T120HS RoHS Case style: TO247 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	5+	30+	60+	300+
Net price (EUR)	1,7935	1,3304	1,1353	1,1001	1,0554

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Packaging:
30/60 Quantity (multiple: 1)

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• Parameters

Gate charge:	200nC
Max. dissipated power:	275W
Max collector current (impulse):	75A
Max. collector current:	50A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	TO247
Manufacturer:	JIAENSEMI
Operating temperature (range):	-40°C ~ 155°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	30V
Mounting:	THT

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