JNG30N120HS3 JIAENSEMI

Symbol Micros: TJNG30n120hs3

528835

TJNG30n120hs3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 30V; 50A; 100A; 260W; 4V~6V; 165nC; -55°C~150°C;

Parameters

Gate charge:	165nC
Max. dissipated power:	260W
Max collector current (impulse):	100A
Max. collector current:	50A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	JIAENSEMI

All parameters

Manufacturer:: JIAENSEMI Manufacturer part number: JNG30N120HS3 RoHS Case style: TO247 Datasheet

In stock:

25 pcs.

Quantity of pcs.	1+	5+	30+	150+	300+
Net price (EUR)	2,3600	1,8734	1,6618	1,5890	1,5725

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	165nC
Max. dissipated power:	260W
Max collector current (impulse):	100A
Max. collector current:	50A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	JIAENSEMI
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	30V
Mounting:	THT

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