JNG40T120HS JIAENSEMI

Symbol Micros: TJNG40t120hs

528836

TJNG40t120hs

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 30V; 80A; 120A; 300W; 4V~6V; 107nC; -55°C~155°C;

Parameters

Gate charge:	107nC
Max. dissipated power:	300W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	JIAENSEMI

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• Parameters

Gate charge:	107nC
Max. dissipated power:	300W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	JIAENSEMI
Operating temperature (range):	-55°C ~ 155°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	30V
Mounting:	THT

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