LGE2312

Symbol Micros: TLGE2312

322117

TLGE2312

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; unipolar; 20V; 10V; 31mOhm; 4,9A; 1,25W; -55°C ~ 155°C; Substitute: LGE2312-LGE;

Parameters

Open channel resistance:	31mOhm
Max. drain current:	4,9A
Max. power loss:	1,25W
Case:	SOT23
Manufacturer:	LGE
Max. drain-source voltage:	20V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: LGE Manufacturer part number: LGE2312 RoHS Case style: SOT23t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1801	0,0854	0,0480	0,0365	0,0327

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	31mOhm
Max. drain current:	4,9A
Max. power loss:	1,25W
Case:	SOT23
Manufacturer:	LGE
Max. drain-source voltage:	20V
Max. drain-gate voltage:	10V
Transistor type:	MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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