LND150N8-G Microchip

Symbol Micros: TLND150n8g

113215

TLND150n8g

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Case : SOT89

Datasheet

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N-MOSFET 500V 30mA 1.6W 1000Ω

Parameters

Open channel resistance:	1000Ohm
Max. drain current:	30mA
Max. power loss:	1,6W
Case:	SOT89
Manufacturer:	Supertex
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1000Ohm
Max. drain current:	30mA
Max. power loss:	1,6W
Case:	SOT89
Manufacturer:	Supertex
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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