LND150N8-G Microchip

Symbol Micros: TLND150n8g

113215

TLND150n8g

Contractor Symbol:

Case : SOT89

Datasheet

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N-MOSFET 500V 30mA 1.6W 1000Ω

Parameters

Open channel resistance:	1000Ohm
Max. drain current:	30mA
Max. power loss:	1,6W
Case:	SOT89
Manufacturer:	Supertex
Max. drain-source voltage:	500V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Microchip Manufacturer part number: LND150N8-G Case style: SOT89  

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114000 pcs.

Quantity of pcs.	2000+ (Please wait for the order confirmation)
Net price (EUR)	0,3596

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Packaging:
2000

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• Parameters

Open channel resistance:	1000Ohm
Max. drain current:	30mA
Max. power loss:	1,6W
Case:	SOT89
Manufacturer:	Supertex
Max. drain-source voltage:	500V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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