MBT3904DW1T1G
Symbol Micros:
TMBT3904dw1t1g c
Case : SOT363
40V 200mW 300@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS LRC LMBT3904DW1T1G;
Parameters
| Power dissipation: | 200mW |
| Manufacturer: | FUXINSEMI |
| Case: | SOT363 |
| Current gain factor: | 300 |
| Cutoff frequency: | 300MHz |
| Max. collector current: | 200mA |
| Max collector-emmiter voltage: | 40V |
| Power dissipation: | 200mW |
| Manufacturer: | FUXINSEMI |
| Case: | SOT363 |
| Current gain factor: | 300 |
| Cutoff frequency: | 300MHz |
| Max. collector current: | 200mA |
| Max collector-emmiter voltage: | 40V |
| Operating temperature (range): | -55°C ~ 150°C |
| Transistor type: | 2xNPN |
