MBT3904DW1T1G SOT363 RoHS SPQ3000 FUXIN

Symbol Micros: TMBT3904dw1t1g FUX
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Case : SOT363
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40V 200mW 300@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS LRC LMBT3904DW1T1G;
Parameters
Power dissipation: 150mW
Manufacturer: FUXINSEMI
Current gain factor: 300
Case: SC-88
Cutoff frequency: 300MHz
Max. collector current: 200mA
Max collector-emmiter voltage: 40V
         
 
Item available on request
Power dissipation: 150mW
Manufacturer: FUXINSEMI
Current gain factor: 300
Case: SC-88
Cutoff frequency: 300MHz
Max. collector current: 200mA
Max collector-emmiter voltage: 40V
Operating temperature (range): -55°C ~ 150°C
Transistor type: 2xNPN

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