MJ11015

Symbol Micros: TMJ11015

33895

TMJ11015

Contractor Symbol:

Case : TO 3

Datasheet

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darl.PNP 30A 120V 200W 4MHz

Parameters

Power dissipation:	200W
Manufacturer:	ON SEMICONDUCTOR
Case:	TO 3
Current gain factor:	1000
Cutoff frequency:	4MHz
Max. collector current:	30A
Max collector-emmiter voltage:	120V

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• Parameters

Power dissipation:	200W
Manufacturer:	ON SEMICONDUCTOR
Case:	TO 3
Current gain factor:	1000
Cutoff frequency:	4MHz
Max. collector current:	30A
Max collector-emmiter voltage:	120V
Operating temperature (range):	-55°C ~ 200°C
Transistor type:	PNP

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