MJ11015
Symbol Micros:
TMJ11015
Case : TO 3
darl.PNP 30A 120V 200W 4MHz
Parameters
| Power dissipation: | 200W |
| Current gain factor: | 1000 |
| Cutoff frequency: | 4MHz |
| Manufacturer: | ON SEMICONDUCTOR |
| Case: | TO 3 |
| Max. collector current: | 30A |
| Max collector-emmiter voltage: | 120V |
| Power dissipation: | 200W |
| Current gain factor: | 1000 |
| Cutoff frequency: | 4MHz |
| Manufacturer: | ON SEMICONDUCTOR |
| Case: | TO 3 |
| Max. collector current: | 30A |
| Max collector-emmiter voltage: | 120V |
| Operating temperature (range): | -55°C ~ 200°C |
| Transistor type: | PNP |
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