MJ11016 ONS

Symbol Micros: TMJ11016

33896

TMJ11016

Contractor Symbol:

Case : TO 3

Datasheet

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Tranzystor NPN; 1000; 200W; 120V; 30A; 4MHz; -55°C ~ 200°C; Odpowiednik: MJ11016G; MJ11016-CDI;

Parameters

Power dissipation:	200W
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	1000
Case:	TO 3
Cutoff frequency:	4MHz
Max. collector current:	30A
Max collector-emmiter voltage:	120V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: MJ11016G RoHS Case style: TO 3 Datasheet

In stock:

9 pcs.

Quantity of pcs.	1+	3+	10+	39+	117+
Net price (EUR)	6,8714	6,3292	5,9977	5,8012	5,7159

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Packaging:
39 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: MJ11016G RoHS Case style: TO 3 Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	6,8714	6,3292	5,9977	5,8296	5,7254

Add to comparison tool Add inquiry (RFQ)

Packaging:
100 Quantity (multiple: 1)

- +

• Parameters

Power dissipation:	200W
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	1000
Case:	TO 3
Cutoff frequency:	4MHz
Max. collector current:	30A
Max collector-emmiter voltage:	120V
Operating temperature (range):	-55°C ~ 200°C
Transistor type:	NPN

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