MJD112

Symbol Micros: TMJD112 LGE
Contractor Symbol:
Case : TO252
Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO252 MJD112-LGE
Parameters
Power dissipation: 1W
Manufacturer: LGE
Current gain factor: 500
Cutoff frequency: 25MHz
Case: TO-252
Max. collector current: 2A
Max collector-emmiter voltage: 100V
Manufacturer:: LGE Manufacturer part number: MJD112 RoHS Case style: TO252t/r  
In stock:
200 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,2779 0,1774 0,1244 0,1081 0,1010
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Packaging:
200
Power dissipation: 1W
Manufacturer: LGE
Current gain factor: 500
Cutoff frequency: 25MHz
Case: TO-252
Max. collector current: 2A
Max collector-emmiter voltage: 100V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN