MJD112

Symbol Micros: TMJD112 LGE

322146

TMJD112 LGE

Contractor Symbol:

Case : TO252

Datasheet

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Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO252 MJD112-LGE

Parameters

Power dissipation:	1W
Manufacturer:	LGE
Current gain factor:	500
Cutoff frequency:	25MHz
Case:	TO-252
Max. collector current:	2A
Max collector-emmiter voltage:	100V

All parameters

Manufacturer:: LGE Manufacturer part number: MJD112 RoHS Case style: TO252t/r  

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,2779	0,1774	0,1244	0,1081	0,1010

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Power dissipation:	1W
Manufacturer:	LGE
Current gain factor:	500
Cutoff frequency:	25MHz
Case:	TO-252
Max. collector current:	2A
Max collector-emmiter voltage:	100V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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