MJD127T4G HXY MOSFET
Symbol Micros:
TMJD127 HXY
Case : TO252 (DPACK)
Transistor Darlington PNP; 12000; 1,5W; 100V; 8A; -55°C ~ 150°C; Equivalent: MJD127G; MJD127T4G; MJD127-TP;
Parameters
| Power dissipation: | 1,5W |
| Manufacturer: | HXY MOSFET |
| Current gain factor: | 12000 |
| Case: | TO252 (DPACK) |
| Max. collector current: | 8A |
| Max collector-emmiter voltage: | 100V |
| Operating temperature (range): | -55°C ~ 150°C |
| Power dissipation: | 1,5W |
| Manufacturer: | HXY MOSFET |
| Current gain factor: | 12000 |
| Case: | TO252 (DPACK) |
| Max. collector current: | 8A |
| Max collector-emmiter voltage: | 100V |
| Operating temperature (range): | -55°C ~ 150°C |
| Transistor type: | Darlington PNP |
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