MJD45H11G

Symbol Micros: TMJD45h11
Contractor Symbol:
Case : TO252 (DPAK)
Transistor PNP; 60; 1,75W; 80V; 8A; 90MHz; -55°C~150°C; Substitute: MJD45H11RLG; MJD45H11TF; MJD45H11TM;
Parameters
Power dissipation: 1,75W
Manufacturer: ON SEMICONDUCTOR
Case: TO252 (DPACK)
Current gain factor: 60
Cutoff frequency: 90MHz
Max. collector current: 8A
Max collector-emmiter voltage: 80V
Manufacturer:: ON-Semiconductor Manufacturer part number: MJD45H11G RoHS Case style: TO252 (DPAK) Datasheet
In stock:
365 pcs.
Quantity of pcs. 1+ 5+ 20+ 75+ 300+
Net price (EUR) 1,1257 0,7458 0,6153 0,5617 0,5361
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Packaging:
75/300
Power dissipation: 1,75W
Manufacturer: ON SEMICONDUCTOR
Case: TO252 (DPACK)
Current gain factor: 60
Cutoff frequency: 90MHz
Max. collector current: 8A
Max collector-emmiter voltage: 80V
Operating temperature (range): -55°C ~ 150°C
Transistor type: PNP