MJD45H11J DPAK(SOT428C) NEXPERIA

Symbol Micros: TMJD45H11J

341137

TMJD45H11J

Contractor Symbol:

Case : DPAK

Datasheet

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Bipolar (BJT) Transistor PNP 80V 8A 80MHz 1.75W Surface Mount DPAK

Parameters

Power dissipation:	1,75W
Manufacturer:	Nexperia
Current gain factor:	60
Case:	DPAK
Cutoff frequency:	80MHz
Max. collector current:	8A
Max collector-emmiter voltage:	80V

All parameters

Manufacturer:: NXP Manufacturer part number: MJD45H11J RoHS Case style: DPAK t/r Datasheet

In stock:

0 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6092	0,3825	0,3164	0,2833	0,2645

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Power dissipation:	1,75W
Manufacturer:	Nexperia
Current gain factor:	60
Case:	DPAK
Cutoff frequency:	80MHz
Max. collector current:	8A
Max collector-emmiter voltage:	80V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

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