MJD45H11J DPAK(SOT428C) NEXPERIA

Symbol Micros: TMJD45H11J

341137

TMJD45H11J

Contractor Symbol:

Case : DPAK

Datasheet

Add to favourites

Bipolar (BJT) Transistor PNP 80V 8A 80MHz 1.75W Surface Mount DPAK

Parameters

Power dissipation:	1,75W
Manufacturer:	Nexperia
Current gain factor:	60
Case:	DPAK
Cutoff frequency:	80MHz
Max. collector current:	8A
Max collector-emmiter voltage:	80V

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Power dissipation:	1,75W
Manufacturer:	Nexperia
Current gain factor:	60
Case:	DPAK
Cutoff frequency:	80MHz
Max. collector current:	8A
Max collector-emmiter voltage:	80V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.