MMBFJ111
Symbol Micros:
TMMBFJ111
Case : SOT23
N-JFET 50mA 35V 350mW (=PMBFJ111)
Parameters
Open channel resistance: | 30Ohm |
Max. drain current: | 20mA |
Max. power loss: | 350mW |
Case: | SOT23 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 35V |
Transistor type: | N-JFET |
Open channel resistance: | 30Ohm |
Max. drain current: | 20mA |
Max. power loss: | 350mW |
Case: | SOT23 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 35V |
Transistor type: | N-JFET |
Max. gate-source Voltage: | 35V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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