MMBFJ113

Symbol Micros: TMMBFJ113

26827

TMMBFJ113

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-JFET 50mA 35V 350mW

Parameters

Open channel resistance:	100Ohm
Max. drain current:	2mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	35V
Transistor type:	N-JFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBFJ113 Case style: SOT23  

External warehouse:

60000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0655

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBFJ113 Case style: SOT23  

External warehouse:

18000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0530

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	100Ohm
Max. drain current:	2mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	35V
Transistor type:	N-JFET
Max. gate-source Voltage:	35V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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