MMBFJ113

Symbol Micros: TMMBFJ113

26827

TMMBFJ113

Contractor Symbol:

Case : SOT23

Datasheet

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N-JFET 50mA 35V 350mW

Parameters

Open channel resistance:	100Ohm
Max. drain current:	2mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	35V
Transistor type:	N-JFET

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• Parameters

Open channel resistance:	100Ohm
Max. drain current:	2mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	35V
Transistor type:	N-JFET
Max. gate-source Voltage:	35V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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