MMBFJ177LT1G

Symbol Micros: TMMBFJ177

43386

TMMBFJ177

Contractor Symbol:

Case : SOT23

Datasheet

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Tranzystor P-JFET; 30V; 30V; 300Ohm; 20mA; 225mW; -55°C ~ 150°C; Odpowiednik: SST177-T1; MMBFJ177LT1G; MMBFJ177; PMBFJ177; PMBFJ177,215;

Parameters

Open channel resistance:	300Ohm
Max. drain current:	20mA
Max. power loss:	225mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-JFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: MMBFJ177LT1G RoHS Case style: SOT23t/r  

In stock:

5327 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,2492	0,1327	0,1028	0,0949	0,0909

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	300Ohm
Max. drain current:	20mA
Max. power loss:	225mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	P-JFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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