MMBT3906T1G ONS

Symbol Micros: TMMBT3906lt
Contractor Symbol:
Case : SOT23
PNP 200mA 40V 300mW 250MHz
Parameters
Power dissipation: 300mW
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 300
Case: SOT23
Cutoff frequency: 250MHz
Max. collector current: 200mA
Max collector-emmiter voltage: 40V
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT3906LT1G RoHS Case style: SOT23t/r Datasheet
In stock:
39988 pcs.
Quantity of pcs. 50+ 400+ 3000+ 6000+ 30000+
Net price (EUR) 0,0185 0,0052 0,0029 0,0026 0,0024
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Packaging:
3000/30000
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT3906LT3G Case style: SOT23  
External warehouse:
90000 pcs.
Quantity of pcs. 20000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0073
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Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT3906LT1G Case style: SOT23  
External warehouse:
594000 pcs.
Quantity of pcs. 18000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0073
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 300mW
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 300
Case: SOT23
Cutoff frequency: 250MHz
Max. collector current: 200mA
Max collector-emmiter voltage: 40V
Operating temperature (range): -55°C ~ 150°C
Transistor type: PNP
Detailed description

MMBT3906 PNP BJT Transistor SOT-23

The MMBT3906 transistor is a classic and widely used bipolar junction transistor (BJT) in a PNP configuration. It is indispensable in circuits that require a versatile component for both switching and amplification of small signals with low power consumption. Supplied in a compact SMD SOT-23 package, it represents a standard solution for miniature digital and analog electronics.

Key Features and Specifications of the MMBT3906 Transistor

The MMBT3906 transistor is valued for its stable operating parameters and high transition frequency, making it ideal for applications requiring fast switching. As a PNP transistor, it performs exceptionally well in low-voltage circuits.

The most important technical parameters of the MMBT3906 transistor include:

  • Transistor type: Bipolar Junction Transistor (BJT) in PNP configuration
  • Maximum collector-emitter voltage (VCEO): 40 V
  • Continuous collector current (IC): 200 mA
  • Current gain (hFE): high, ensuring efficient signal amplification
  • Transition frequency (fT): high (typically above 250 MHz)
  • Package: SOT-23 (SMD)

This set of parameters, especially the high hFE value, makes the MMBT3906 transistor indispensable in applications requiring precise control and signal amplification.

Typical Applications of the MMBT3906 PNP Transistor

Thanks to its versatility and high reliability, the MMBT3906 BJT transistor is used in almost every segment of electronics, performing key functions in signal processing and control. Typical applications include:

  • digital and logic circuits
  • low-power amplifiers and drivers
  • logic interfaces and voltage level translators
  • LED control and small relay driving circuits
  • measurement and telecommunications equipment

Thanks to its proven architecture, this SMD transistor is frequently chosen for both prototyping and mass production of electronic devices, ensuring stable operation. Available from Micros, it provides high reliability and stable parameters in critical switching and amplification circuits.

If you have any technical questions regarding the integration and selection of this component, please contact us at: sales // micros.com.pl.