MMBT4403LT1G

Symbol Micros: TMMBT4403lt

51325

TMMBT4403lt

Contractor Symbol:

Case : SOT23

Datasheet

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PNP 600mA 40V 300mW 200MHz 100<hFE<300

Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23
Current gain factor:	300
Cutoff frequency:	200MHz
Max. collector current:	600mA
Max collector-emmiter voltage:	40V

All parameters

         

 

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• Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23
Current gain factor:	300
Cutoff frequency:	200MHz
Max. collector current:	600mA
Max collector-emmiter voltage:	40V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

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