MMBT5088LT1G

Symbol Micros: TMMBT5088l

207834

TMMBT5088l

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN; 900; 300mW; 30V; 50mA; 50MHz; -55°C ~ 150°C;

Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	900
Case:	SOT23
Cutoff frequency:	50MHz
Max. collector current:	50mA
Max collector-emmiter voltage:	30V

All parameters

         

 

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• Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	900
Case:	SOT23
Cutoff frequency:	50MHz
Max. collector current:	50mA
Max collector-emmiter voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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