MMBT5401

Symbol Micros: TMMBT5401 c

335280

TMMBT5401  c

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

Transistor PNP; Bipolar; 300; -150V; -5V; 100MHz; -600mA; 350mW; -55°C~150°C; MMBT5401-AU_R1_000A1; MMBT5401-YAN; MMBT5401-LGE;

Parameters

Power dissipation:	350mW
Manufacturer:	YFW
Current gain factor:	300
Case:	SOT23
Cutoff frequency:	100MHz
Max. collector current:	-600mA
Max collector-emmiter voltage:	-150V

All parameters

Manufacturer:: YFW Manufacturer part number: MMBT5401 RoHS Case style: SOT23t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	10+	50+	400+	3000+	12000+
Net price (EUR)	0,0676	0,0260	0,0127	0,0101	0,0096

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Packaging:
3000 Quantity (multiple: 10)

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• Parameters

Power dissipation:	350mW
Manufacturer:	YFW
Current gain factor:	300
Case:	SOT23
Cutoff frequency:	100MHz
Max. collector current:	-600mA
Max collector-emmiter voltage:	-150V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

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